|Authors: ||J. O'Callaghan, R. Loi, E.E.Mura, B.Roycroft, A.J.Trindade, K.Thomas, A.GoCalinska, E.Pelucchi, J. Zhang, G. Roelkens, C.A.Bower, B.Corbett|
|Title: ||Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices|
|Format: ||International Journal|
|Publication date: ||11/2017|
|Journal/Conference/Book: ||Optical Materials Express
|Volume(Issue): ||7(12) p.4408-4414|
|Citations: ||24 (Dimensions.ai - last update: 29/1/2023)|
5 (OpenCitations - last update: 19/4/2023)
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Heterogeneous integration of InP devices to Si substrates by adhesive-less micro
transfer printing requires flattest surfaces for optimum attachment and thermal sinking.
InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons
by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP
when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with surface roughness < 2 nm and flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.
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