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Authors: J. O'Callaghan, R. Loi, E.E.Mura, B.Roycroft, A.J.Trindade, K.Thomas, A.GoCalinska, E.Pelucchi, J. Zhang, G. Roelkens, C.A.Bower, B.Corbett
Title: Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices
Format: International Journal
Publication date: 11/2017
Journal/Conference/Book: Optical Materials Express
Volume(Issue): 7(12) p.4408-4414
DOI: 10.1364/ome.7.004408
Citations: 28 ( - last update: 9/6/2024)
5 (OpenCitations - last update: 19/4/2024)
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Heterogeneous integration of InP devices to Si substrates by adhesive-less micro
transfer printing requires flattest surfaces for optimum attachment and thermal sinking.
InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons
by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP
when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with surface roughness < 2 nm and flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.

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