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Authors: G. Chen, J. Goyvaerts, S. Kumari, J. Van Kerrebrouck, M. Muneeb, S. Uvin, Yu, Yu, G. Roelkens
Title: Integration of high-speed GaAs metal-semiconductor-metal photodetectors by means of transfer printing for 850 nm wavelength photonic interposers
Format: International Journal
Publication date: 3/2018
Journal/Conference/Book: Optics Express
Volume(Issue): 26(5) p.6351-6359
DOI: 10.1364/oe.26.006351
Citations: 23 ( - last update: 14/7/2024)
18 (OpenCitations - last update: 27/6/2024)
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We propose and demonstrate the integration of 850 nm GaAs-based metal-semiconductor-metal (MSM) photodetectors (PDs) based on transfer printing for application in photonic interposers. Both devices that directly interface with a multimode optical fiber (with device dimensions of 70 μm x 70 μm) as well as devices that interface with a SiN waveguide layer through a grating coupler (with device dimensions of 30 μm × 30 μm) are demonstrated. The dark currents are measured to be 22 nA and 7.2 nA at 2 V bias for the larger and smaller PDs respectively. For 850 nm wavelength, the external responsivities are measured to be 0.117 A/W and 0.1 A/W at 2 V bias. 20 GHz bandwidth is measured. Open 40 Gb/s eye diagrams are realized.

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