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Authors: A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, J. Van Campenhout
Title: High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers
Format: International Conference Proceedings
Publication date: 8/2018
Journal/Conference/Book: Conference on Lasers and Electro-Optics Pacific Rim
Editor/Publisher: OSA, 
Volume(Issue): p.Th3C.1
Location: Hong Kong, China
DOI: 10.1364/CLEOPR.2018.Th3C.1
Citations: 2 (Dimensions.ai - last update: 25/7/2021)
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Abstract

Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform.

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