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Authors: C. Ozdemir, Y. De Koninck, N. Kuznetsova, M. Baryshnikova, D. Van Thourhout, B. Kunert, M. Pantouvaki, J. Van Campenhout
Title: InGaAs/GaAs Multi-Quantum Well Nano-Ridge Waveguide Photodetector Epitaxially Grown on a 300-mm Si Wafer
Format: International Conference Presentation
Publication date: 10/2020
Journal/Conference/Book: Annual Conference of the IEEE Photonics Society
Editor/Publisher: IEEE , 
Location: Canada
DOI: 10.1109/IPC47351.2020.9252262
Citations: 4 (Dimensions.ai - last update: 8/5/2022)
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Abstract

We demonstrate p-i-n InGaAs/GaAs quantum well nano-ridge waveguide photodetectors epitaxially grown and fully processed on a 300mm Si wafer. The devices exhibit low dark currents of 10pA, current density of 1.43 x 10-5 A/cm2, at -1V bias and internal responsivities of 0.48A/W at 1020nm wavelength.

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