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Authors: J. Rahimi Vaskasi, M. Shahin, K. Van Gasse, G. Roelkens, G. Morthier
Title: Characterization of optical loss and carrier lifetime in integrated III-V/SOI distributed feedback lasers
Format: International Conference Presentation
Publication date: 11/2019
Journal/Conference/Book: Annual Symposium of the IEEE Photonics Society Benelux Chapter
Editor/Publisher: IEEE Photonics Society, 
Location: Amsterdam, Netherlands
Citations: Look up on Google Scholar
Download: Download this Publication (684KB) (684KB)


Characterization of heterogeneously integrated III-V/SOI distributed feedback (DFB) lasers is reported. Based on the measurement results, the taper used to couple the light from the III-V active section to the Si waveguide underneath can lead to an optical loss of about 1 dB per taper. Moreover, heterogeneously integrated lasers based on an InAlGaAs multi-quantum wells (MQWs) active region have at least 50 % shorter carrier lifetime than their InGaAsP counterparts.

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