Authors: | D. Colucci, M. Baryshnikova, Y. Shi, Y. Mols, M. Muneeb, Y. De Koninck, D. Yudistira, M. Pantouvaki, J. Van Campenhout, R. Langer, D. Van Thourhout, B. Kunert | Title: | Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering | Format: | International Journal | Publication date: | 4/2022 | Journal/Conference/Book: | Optics Express
| Editor/Publisher: | Optica Publishing Group, | Volume(Issue): | 30(8) p.13510-13521 | DOI: | 10.1364/OE.454795 | Citations: | 15 (Dimensions.ai - last update: 29/9/2024) Look up on Google Scholar
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Abstract
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby serves as a tunable base for the integration of diverse device hetero-layers. To demonstrate the flexibility of this approach, we realized an O-band nano-ridge laser containing three In0.45Ga0.55As quantum wells, which are pseudomorphically strained to an In0.25Ga0.75As nano-ridge base. The demonstration of an optically pumped nano-ridge laser operating around 1300 nm underlines the potential of this cost-efficient and highly scalable integration approach for silicon photonics. Related Research Topics
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