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Thomas Swann - INTEC: MOVPE for InGaAsP/InP

Full Name: Development of 3x2" MOVPE reactor for the uniform growth of InGaAsP/InP and InAlGaP/GaAs materials

Duration: 1/1/95-...

Objective:

  • To develop growth process and optimise uniformity for InGaAsP/InP- and InAlGaP/GaAs-materials

Publications in the framework of this project (3)

    International Journals

  1. Z. Wang, B. Tian, M. Pantouvaki, Weiming Guo, Philippe Absil, J Van Campenhout, Clement Merckling, D. Van Thourhout, Room Temperature InP Distributed Feedback Laser Array Directly Grown on (001) Silicon, Nature Photonics, doi:10.1038/nphoton.2015.199 (2015)  Download this Publication (1MB).
      International Conferences

    1. Z. Wang, M. Pantouvaki, G. Morthier, C. Merckling, J. Van Campenhout, D. Van Thourhout, G. Roelkens, Heterogeneous Integration of InP Devices on Silicon, the 28th International Conference on Indium Phosphide and Related Materials (IPRM) (invited), Japan, p.paper ThD1-1 (2016)  Download this Publication (379KB).
    2. Z. Wang, A. Malik, B. Tian, M. Muneeb, Clement Merckling, M. Pantouvaki, Yosuke Shimura, Roger Loo, J Van Campenhout, D. Van Thourhout, G. Roelkens, Near/Mid-Infrared Heterogeneous Si Photonics, The 9th International Conference On Silicon Epitaxy And Heterostructures (invited), (2015)  Download this Publication (3.5MB).