|Authors: ||Z. Wang, B. Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling, D. Van Thourhout|
|Title: ||Room Temperature InP Distributed Feedback Laser Array Directly Grown on (001) Silicon|
|Format: ||International Journal|
|Publication date: ||10/2015|
|Journal/Conference/Book: ||Nature Photonics
|Internal Reference: ||[N-1802]|
Fully exploiting the silicon photonics platform for large volume, cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array monolithically grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined using standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits.
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