Authors:	W. Bogaerts, V. Wiaux, D. Taillaert, S. Beckx, B. Luyssaert, P. Bienstman, R. Baets
Title:	Fabrication of Photonic Crystals in Silicon-on-Insulator Using 248-nm Deep UV Lithography
Format:	International Journal
Publication date:	10/2002
Journal/Conference/Book:	IEEE Journal on Selected Topics in Quantum Electronics
Editor/Publisher:	10.1109/JSTQE.2002.800845,
Volume(Issue):	8(4) p.928-934
DOI:	10.1109/jstqe.2002.800845
Citations:	135 (Dimensions.ai - last update: 14/4/2024) 74 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We demonstrate wavelength-scale photonic nano-structures, including photonic crystals, fabricated in silicon-on-insulator using deep UV lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam lithography. This is illustrated with experimental results. Finally, we also present some of the issues that arise when trying to use established CMOS processes for the fabrication of photonic ICs.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)

Related Projects

• IST: PICCO (Photonic Integrated Circuits using photonic Crystal Optics)
• IAP-V: PHOTON (Photons and Photonics : from basic physics to system concepts)