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Authors: T.K. Liang, L.R. Nunes, M. Tuschiya, K.S. Abedin, T. Miyazaki, D. Van Thourhout, W. Bogaerts, P. Dumon, R. Baets, H.K. Tsang
Title: High speed logic gate using two-photon absorption in Silicon waveguides
Format: International Journal
Publication date: 9/2006
Journal/Conference/Book: Optics Communications
Editor/Publisher: Elsevier, 
Volume(Issue): 265(1) p.171-174
Internal Reference: [N-517]
Download: Download this Publication (194KB) (194KB)

Abstract

The switching speed of conventional silicon-based optical switching devices based on plasma dispersion effect is limited by the lifetime of free carriers which introduce either phase or absorption changes. Here we report an all-optical logic NOR gate which does not rely on free carriers but instead uses two-photon absorption. High speed operation was achieved using pump induced non-degenerate two-photon absorption inside the submicron size silicon wire waveguides. The device required low pulse energy (few pJ) for logic gate operation.

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