Authors:	J. Brouckaert, G. Roelkens, D. Van Thourhout, R. Baets
Title:	Thin film InGaAs MSM photodetectors integrated onto silicon-on-insulator waveguide circuits
Format:	International Conference Proceedings
Publication date:	11/2006
Journal/Conference/Book:	LEOS Benelux Annual Symposium
Location:	Eindhoven, Netherlands
Citations:	Look up on Google Scholar
Download:	(1.2MB)

Abstract

Silicon-on-insulator (SOI) is rapidly emerging as a versatile platform for a variety of
integrated nanophotonic components. High density waveguide circuits can be
fabricated using standard CMOS processing techniques. However, light detection in the
near-infrared wavelength range (1550 nm) is not possible in silicon which is naturally
transparent in this region. One possibility for overcoming this is the integration of III-V
semiconductors. We present simulation results of a very compact thin film InGaAs
metal-semiconductor-metal (MSM) detector integrated on an SOI waveguide. These
photodetectors can be fabricated on a wafer scale and efficiencies of +90% are
predicted for wavelengths up to 1650 nm.

Related Research Topics

• Die-to-wafer bonding technology (2003-2012)
• Photo-spectrometer based on heterogeneous integration (2004-2009)

Related Projects

• IWT: epSOC (electro-photonic System-On-Chip)