| Authors: | Landobasa Y.M. Tobing, Desmond C.S. Lim, P. Dumon, R. Baets, Mee-Koy Chin | | Title: | Finesse enhancement in silicon-on-insulator two-ring resonator system | | Format: | International Journal | | Publication date: | 3/2008 | | Journal/Conference/Book: | Applied Physics Letters
| | Volume(Issue): | 92 p.101122 | | DOI: | 10.1063/1.2894203 | | Citations: | 25 (Dimensions.ai - last update: 17/11/2024)
17 (OpenCitations - last update: 3/5/2024)
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Abstract
We demonstrate experimentally the finesse enhancement in a pair of mutually coupled ring resonators coupled to two buses fabricated in silicon-on-insulator technology, as proposed theoretically in an earlier paper. A finesse close to 100 or Q=30 000 is obtained in a two-ring system, with the outer ring double the size of the inner ring, and an external coupling coefficient of 34%. The maximum finesse enhancement relative to the single-ring structure is 14 times, in good agreement with the theoretical prediction. Related Research Topics
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