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Authors: Landobasa Y.M. Tobing, Desmond C.S. Lim, P. Dumon, R. Baets, Mee-Koy Chin
Title: Finesse enhancement in silicon-on-insulator two-ring resonator system
Format: International Journal
Publication date: 3/2008
Journal/Conference/Book: Applied Physics Letters
Volume(Issue): 92 p.101122
Internal Reference: [N-696]
DOI:
Download: Download this Publication (550KB) (550KB)

Abstract

We demonstrate experimentally the finesse enhancement in a pair of mutually coupled ring resonators coupled to two buses fabricated in silicon-on-insulator technology, as proposed theoretically in an earlier paper. A finesse close to 100 or Q=30 000 is obtained in a two-ring system, with the outer ring double the size of the inner ring, and an external coupling coefficient of 34%. The maximum finesse enhancement relative to the single-ring structure is 14 times, in good agreement with the theoretical prediction.

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