Abstract
Focused-ion-beam etching of silicon has the potential of fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation limit the applicability of FIB in devices where the optical mode is confined near the etched region. We demonstrate a reduction of the losses by etching with iodine gas enhancement, followed by baking at 300 °C. This technique was applied for the prototyping of several grating coupler concepts and for the fabrication of slot waveguides and ring resonators. Related Research Topics
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