| Authors: | S. Stankovic, G. Roelkens, D. Van Thourhout, R. Baets, R. Jones, M. Sysak, B. Koch | | Title: | Hybrid III-V/Silicon laser based on DVS-BCB bonding | | Format: | International Conference Poster | | Publication date: | 11/2008 | | Journal/Conference/Book: | 13th Annual Symposium of the IEEE/LEOS Benelux Chapter
| | Volume(Issue): | p.139-142 | | Location: | Enschede, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
Recent years have witnessed an increasing research interest in hybrid lasers based on evanescent coupling between III-V materials and silicon waveguides. Recently reported state-of-the-art devices utilize molecular die-to-wafer bonding of III-V epitaxial layers to silicon waveguides, which imposes strict requirements on the cleanliness and quality of the bonded surfaces. In this paper, we propose a hybrid III-V/silicon laser based on adhesive DVS-BCB bonding providing less strict surface quality requirements and a fabrication procedure suitable for large-scale production. The general layout of the device and its simulated properties are presented and discussed. Related Research Topics
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