Authors:	S. Selvaraja, Erik Sleeckx, Marc Schaekers, W. Bogaerts, D. Van Thourhout, P. Dumon, R. Baets
Title:	Low-Loss Amorphous Silicon-On-Insulator Technology for Photonic Integrated Circuitry
Format:	International Journal
Publication date:	5/2009
Journal/Conference/Book:	Optics Communications
Editor/Publisher:	Elsevier B.V,
Volume(Issue):	282(9) p. 1767-1770
DOI:	10.1016/j.optcom.2009.01.021
Citations:	114 (Dimensions.ai - last update: 17/11/2024) 85 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were fabricated by 193nm optical lithography and dry etching. Propagation loss measurements show a loss of 3.46dB/cm for photonic wires (480X220nm) and 1.34dB/cm for ridge waveguides.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)
• Deposited SOI technology for photonic application (2006-2012)

Related Projects

• IWT: epSOC (electro-photonic System-On-Chip)
• ICT: HELIOS (pHotonics ELectronics functional Integration on CMOS)