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Authors: M. Lamponi, S. Keyvaninia, F. Pommereau, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, D. Bordelc, S. Messaoudenec, J.-M. Fedelic, G.-H. Duana
Title: Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through InP die to SOI wafer bonding
Format: International Conference Proceedings
Publication date: 5/2010
Journal/Conference/Book: Group IV Photonics
Volume(Issue): p.WB6
DOI: 10.1109/group4.2010.5643441
Citations: 11 (Dimensions.ai - last update: 18/10/2020)
9 (OpenCitations - last update: 19/10/2020)
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Abstract

Silicon photonics platform is drawing an increasing attention due to the promise of fabricating low-cost, compact circuits that integrate photonic and microelectronic elements [1]. Today, practical Si-based light sources are still missing, despite recent demonstration of optically pumped germanium lasers [2]. This situation has driven research to the heterogeneous integration of III-V on silicon. One of the heterogeneous integration approaches is the use of wafer bonding techniques [3-6]. In such an approach, InP dies are bonded on a SOI wafer, and then processed to fabricate lasers lithographically aligned to silicon waveguides.

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