Authors:	S. Stankovic, D. Van Thourhout, G. Roelkens, R. Jones, J. Heck, M. Sysak
Title:	Die-to-die adhesive bonding for evanescently-coupled photonic devices
Format:	International Conference Proceedings
Publication date:	10/2010
Journal/Conference/Book:	218th ECS Meeting, Symposium on Wafer Bonding / ECS Transactions
Editor/Publisher:	The Electrochemical Society,
Volume(Issue):	33(4) p.411-420
Location:	Las Vegas, United States
DOI:	10.1149/1.3483531
Citations:	10 (Dimensions.ai - last update: 17/11/2024) 6 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

Heterogeneous integration of III-V semiconductor materials on the SOI (silicon-on-insulator) platform is a promising method for fabrication of active photonic devices. It requires a reliable and robust bonding procedure that also enables an effective optical coupling between III-V layers and SOI waveguides. Molecular bonding is usually used for this purpose, but due to its strict requirements for contamination-free and smooth bonding surfaces, it might not be sufficiently robust for industrial-scale fabrication. As an alternative technique, in this paper we present an adhesive bonding procedure based on the use of DVS-BCB. We developed a die-to-die adhesive bonding procedure, resulting in less than 100nm-thick bonding layers thereby enabling evanescent optical coupling between III-V layers and silicon waveguides. The process shows very good robustness and bonding strength (brake-down shear stress of 2MPa). In perspective, we plan to scale-up the process to a multiple die-to-wafer bonding procedure which would be suitable for industrial-scale fabrication.

Related Research Topics

• Die-to-wafer bonding technology (2003-2012)