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Authors: S. Stankovic, D. Van Thourhout, G. Roelkens, R. Jones, J. Heck, M. Sysak
Title: Die-to-die adhesive bonding for evanescently-coupled photonic devices
Format: International Conference Proceedings
Publication date: 10/2010
Journal/Conference/Book: 218th ECS Meeting, Symposium on Wafer Bonding / ECS Transactions
Editor/Publisher: The Electrochemical Society, 
Volume(Issue): 33(4) p.411-420
Location: Las Vegas, United States
DOI: 10.1149/1.3483531
Citations: 9 (Dimensions.ai - last update: 18/10/2020)
6 (OpenCitations - last update: 19/10/2020)
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Abstract

Heterogeneous integration of III-V semiconductor materials on the SOI (silicon-on-insulator) platform is a promising method for fabrication of active photonic devices. It requires a reliable and robust bonding procedure that also enables an effective optical coupling between III-V layers and SOI waveguides. Molecular bonding is usually used for this purpose, but due to its strict requirements for contamination-free and smooth bonding surfaces, it might not be sufficiently robust for industrial-scale fabrication. As an alternative technique, in this paper we present an adhesive bonding procedure based on the use of DVS-BCB. We developed a die-to-die adhesive bonding procedure, resulting in less than 100nm-thick bonding layers thereby enabling evanescent optical coupling between III-V layers and silicon waveguides. The process shows very good robustness and bonding strength (brake-down shear stress of 2MPa). In perspective, we plan to scale-up the process to a multiple die-to-wafer bonding procedure which would be suitable for industrial-scale fabrication.

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