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Authors: M. Tassaert, S. Keyvaninia, D. Van Thourhout, G. Roelkens
Title: Strategies to increase the modal gain in electrically pumped quantum dot based amplifiers integrated on a Silicon-On-Insulator waveguide circuit
Format: International Conference Proceedings
Publication date: 11/2010
Journal/Conference/Book: Photonics Society Benelux meeting
Location: Delft, Netherlands
Citations: Look up on Google Scholar
Download: Download this Publication (218KB) (218KB)


We propose two waveguide structures that allow for high optical confinement in the active region, low loss and electrical injection using a regular P-I-N injection scheme. To achieve these properties, we use a bonded III-V film on a Silicon-On-Insulator circuit. By deeply etching the III-V film to define the waveguide and shallowly etching trenches in the top p-InP contact layer, we can push the mode towards the active layer and away from the lossy contact layers. These waveguide structures were developed for a quantum dot active region to relieve its low confinement factor and consequently reach a higher modal gain.

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