Authors:	S. Stankovic, Jones, Richard, Heck, John, Sysak, Matthew, D. Van Thourhout, G. Roelkens
Title:	Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices
Format:	International Journal
Publication date:	5/2011
Journal/Conference/Book:	Electrochemical and Solid-State Letters
Editor/Publisher:	The Electrochemical Society,
Volume(Issue):	14(8) p.H326-H329
DOI:	10.1149/1.3592267
Citations:	25 (Dimensions.ai - last update: 17/11/2024) 18 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale
fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100 nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows good robustness and bonding strength, with a break-down shear stress of 2 MPa. The process can be scaled-up to a multiple die-to-wafer bonding procedure.

Related Research Topics

• Die-to-wafer bonding technology (2003-2012)