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Authors: S. Stankovic, Jones, Richard, Heck, John, Sysak, Matthew, D. Van Thourhout, G. Roelkens
Title: Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices
Format: International Journal
Publication date: 5/2011
Journal/Conference/Book: Electrochemical and Solid-State Letters
Editor/Publisher: The Electrochemical Society, 
Volume(Issue): 14(8) p.H326-H329
DOI: 10.1149/1.3592267
Citations: 25 ( - last update: 7/7/2024)
18 (OpenCitations - last update: 3/5/2024)
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Recently demonstrated evanescent hybrid III-V/Si lasers are mostly based on molecular bonding of a III-V die on an SOI photonic wafer. This procedure requires ultra-clean and smooth bonding surfaces and might be difficult to implement in an industry-scale
fabrication process. As an alternative, we present a die-to-die adhesive bonding procedure, using a DVS-BCB polymer. We achieved less than 100 nm-thick bonding layers that enable evanescent coupling between III-V and silicon. The process shows good robustness and bonding strength, with a break-down shear stress of 2 MPa. The process can be scaled-up to a multiple die-to-wafer bonding procedure.

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