| Authors: | M. Tassaert, D. Van Thourhout, G. Roelkens | | Title: | Strategies to increase the modal gain in heterogeneously integrated III-V amplifiers on Silicon-On-Insulator | | Format: | International Journal | | Publication date: | 5/2011 | | Journal/Conference/Book: | Optical and Quantum Electronics
| | Editor/Publisher: | Springer, | | Volume(Issue): | p.683-689 | | DOI: | 10.1007/s11082-012-9588-6 | | Citations: | 6 (Dimensions.ai - last update: 14/4/2024)
4 (OpenCitations - last update: 3/5/2024)
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Abstract
A novel waveguide shape is proposed to take advantage of the high index contrast in adhesively bonded III-V on Silicon-On-Insulator (SOI) waveguides for application in on-chip semiconductor optical amplifiers. By decreasing the effective index of the top contact layer, the confinement in the active region can be increased by 70%, boosting the achievable modal gain and reducing the required device length to achieve a certain gain. This technique could reduce the footprint of amplifiers, lasers and other active devices integrated on the SOI platform. Related Research Topics
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