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Authors: A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, G. Roelkens
Title: GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
Format: International Journal
Publication date: 8/2012
Journal/Conference/Book: Optics Express
Volume(Issue): 20(25) p.27297-27303
DOI: 10.1364/oe.20.027297
Citations: 171 ( - last update: 14/7/2024)
104 (OpenCitations - last update: 10/5/2024)
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A surface-illuminated photoconductive detector based on Ge0.9Sn0.1 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2ìm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

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