|Authors: ||N. Hattasan, A. Gassenq, L. Cerutti, J.B. Rodriguez, E. Tournié, G. Roelkens|
|Title: ||The study of integrated thin film GaSb-based Fabry Perot lasers: towards a fully integrated spectrometer on a Silicon-On-Insulator waveguide circuit|
|Format: ||International Conference Proceedings|
|Publication date: ||9/2012|
|Journal/Conference/Book: ||SPIE Photonics West
|Editor/Publisher: ||SPIE, |
|Citations: ||Look up on Google Scholar
We report on thin-film GaSb Fabry-Perot lasers integrated on InP substrate and SOI waveguide circuit. The integration is achieved by using an adhesive polymer (Benzocyclobutene) as bonding agent. The lasers operate at room temperature with lasing wavelength of ~2.02µm.We obtain a minimum threshold current of 48.9mA in the continuous wave regime and 27.7mA in the pulse regime. This yields a current density of 680A/cm2 and 385A/cm2, respectively. The thermal behaviour of the devices is also studied. The lasers operate at up to 35 °C, with a 323 K/W thermal impedance. Results of integrated GaSb lasers on SOI are reported.