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Authors: G. Duan, C. Jany, A. Le Liepvre, M. Lamponi, A. Accard, F. Poingt, D. Make, F. Lelarge, S. Messaoudene, D. Bordel, J.M. Fedeli, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. Thomson, F. Gardes, G. Reed
Title: III-V on Silicon Transmitters
Format: International Conference Proceedings
Publication date: 3/2013
Journal/Conference/Book: Conference on Optical Fiber Communication (OFC) and the National Fiber Optic Engineers Conference (NFOEC), (2013) (invited)
Location: United States
DOI: 10.1364/ofc.2013.om3k.4
Citations: 2 (Dimensions.ai - last update: 18/10/2020)
1 (OpenCitations - last update: 19/10/2020)
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Abstract

Recent advances on hybrid III-V/Si transmitters using a wafer bonding technique are
reported. In particular, widely tunable III-V/Si lasers exhibiting 45 nm tuning range and hybrid
tunable transmitters integrating a silicon Mach-Zehnder modulator are demonstrated.

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