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Authors: S. Keyvaninia, M. Muneeb, S. Stankovic, René van Veldhoven, D. Van Thourhout, G. Roelkens
Title: Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate
Format: International Journal
Publication date: 1/2013
Journal/Conference/Book: Optical Materials Express
Editor/Publisher: OSA, 
Volume(Issue): 3(1) p.35-46
DOI: 10.1364/ome.3.000035
Citations: 150 ( - last update: 16/6/2024)
90 (OpenCitations - last update: 10/5/2024)
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Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising
methods for the fabrication of active photonic devices in silicon photonics. For
this integration, it is essential to have a reliable and robust bonding procedure,
which also provides a uniform and ultra-thin bonding layer for an effective optical
coupling between III-V active layers and SOI waveguides. A new process for
bonding of III-V dies to processed silicon-on-insulator waveguide circuits using
divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a
commercial wafer bonder. This ‘cold bonding’ method significantly simplifies the
bonding preparation for machine-based bonding both for die and wafer-scale
bonding. High-quality bonding, with ultra-thin bonding layers (< 50 nm) is
demonstrated, which is suitable for the fabrication of heterogeneously integrated
photonic devices, specifically hybrid III-V/Si lasers.

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