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Authors: P. Mechet, S. Verstuyft, I. Sagnes, G. Roelkens, G. Morthier
Title: Numerical and Experimental Study of III‐V on SOI Microdisk Lasers with p‐i‐n Junction
Format: International Conference Proceedings
Publication date: 11/2012
Journal/Conference/Book: Proceedings of the 2012 Annual Symposium of the IEEE Photononics Benelux Chapter
Location: Mons, Belgium
Citations: Look up on Google Scholar
Download: Download this Publication (504KB) (504KB)


Continuous wave lasing has been demonstrated in electrically driven InP-based microdisk lasers coupled to an underlying sub-micron silicon wire waveguide,fabricated through heterogeneous integration of InP on silicon-on-insulator (SOli. A
tunnel junction was incorporated in the epitaxy to efficiently contact the p-side of the pn
junction. Our approach focuses on a similarly heterogeneously integrated structure
where the tunnel junction has been replaced by a p-type InP top contact layer, which makes the epitaxy easier to grow. We have performed a numerical analysis of the electrical and optical properties of this new microdisk laser, and we have developed a
process to reduce the optical losses induced by the p-type top contact layer. Samples demonstrate so far good electrical injection, and further lasing characterization will be investigated on a new set of processed samples.

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