| Authors: | P. Mechet, S. Verstuyft, I. Sagnes, G. Roelkens, G. Morthier | | Title: | Numerical and Experimental Study of IIIâ€V on SOI Microdisk Lasers with pâ€iâ€n Junction | | Format: | International Conference Proceedings | | Publication date: | 11/2012 | | Journal/Conference/Book: | Proceedings of the 2012 Annual Symposium of the IEEE Photononics Benelux Chapter
| | Location: | Mons, Belgium | | Citations: | Look up on Google Scholar
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Abstract
Continuous wave lasing has been demonstrated in electrically driven InP-based microdisk lasers coupled to an underlying sub-micron silicon wire waveguide,fabricated through heterogeneous integration of InP on silicon-on-insulator (SOli. A
tunnel junction was incorporated in the epitaxy to efficiently contact the p-side of the pn
junction. Our approach focuses on a similarly heterogeneously integrated structure
where the tunnel junction has been replaced by a p-type InP top contact layer, which makes the epitaxy easier to grow. We have performed a numerical analysis of the electrical and optical properties of this new microdisk laser, and we have developed a
process to reduce the optical losses induced by the p-type top contact layer. Samples demonstrate so far good electrical injection, and further lasing characterization will be investigated on a new set of processed samples. Related Research Topics
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