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Authors: S. Keyvaninia, S. Verstuyft, S. Pathak, F. Lelarge, G. Duan, D. Bordel, J.M. Fedeli, T. De Vries, B. Smalbrugge, J. Bolk, M. Smit, G. Roelkens, D. Van Thourhout
Title: III-V-on-silicon multi-frequency lasers
Format: International Journal
Publication date: 5/2013
Journal/Conference/Book: Optics Express
Editor/Publisher: OSA, 
Volume(Issue): 21(11) p.13675-13683
DOI: 10.1364/OE.21.013675
Citations: 33 ( - last update: 14/7/2024)
29 (OpenCitations - last update: 10/5/2024)
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Compact multi-frequency lasers are realized by combining III-
based optical amplifiers with silicon waveguide optical demultiplexers
using a heterogeneous integration process based on adhesive wafer
bonding. Both devices using arrayed waveguide grating routers as well as
devices using ring resonators as the demultiplexer showed lasing with
threshold currents between 30 and 40 mA and output powers in the order of
a few mW. Laser operation up to 60°C is demonstrated. The small bending
radius allowable for the silicon waveguides results in a short cavity length,
ensuring stable lasing in a single longitudinal mode, even with relaxed
values for the intra-cavity filter bandwidths.

Citations (OpenCitations)

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