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Authors: S. Keyvaninia, S. Verstuyft, L. Van Landschoot, D. Van Thourhout, G. Roelkens, G. Duan, F. Lelarge, J.M. Fedeli, S. Messaoudene, T. De Vries, B. Smalbrugge, E.J. Geluk, J. Bolk, M.Smit
Title: Heterogeneously integrated III-V/silicon distributed feedback lasers
Format: International Journal
Publication date: 12/2013
Journal/Conference/Book: Optics Letters
Editor/Publisher: OSA, 
Volume(Issue): 38(24) p.5434-5437
DOI: 10.1364/ol.38.005434
Citations: 96 ( - last update: 14/7/2024)
88 (OpenCitations - last update: 27/6/2024)
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Heterogeneously integrated III-V-on-silicon second order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 14mW output power coupled to a silicon waveguide, 50dB side mode suppression ratio and continuous wave operation up to 60°C is obtained.

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