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Authors: Z. Wang, B. Tian, Mohanchand Paladugu, M. Pantouvaki, N. Le Thomas, Clement Merckling, Weiming Guo, Johan Dekoster, J. Van Campenhout, Philippe Absil, D. Van Thourhout
Title: Polytypic InP Nano-laser Monolithically Integrated on (001) Silicon
Format: International Journal
Publication date: 9/2013
Journal/Conference/Book: Nano Letters
Volume(Issue): 13(11) p.5063-5069
DOI: 10.1021/nl402145r
Citations: 59 ( - last update: 16/6/2024)
29 (OpenCitations - last update: 19/4/2024)
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On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nano-laser that operates at room temperature with a low threshold of 1.69 pJ, and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range.

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