| Authors: | Z. Wang, B. Tian, Mohanchand Paladugu, M. Pantouvaki, N. Le Thomas, Clement Merckling, Weiming Guo, Johan Dekoster, J. Van Campenhout, Philippe Absil, D. Van Thourhout | | Title: | Polytypic InP Nano-laser Monolithically Integrated on (001) Silicon | | Format: | International Journal | | Publication date: | 9/2013 | | Journal/Conference/Book: | Nano Letters
| | Volume(Issue): | 13(11) p.5063-5069 | | DOI: | 10.1021/nl402145r | | Citations: | 59 (Dimensions.ai - last update: 14/4/2024)
29 (OpenCitations - last update: 19/4/2024)
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Abstract
On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nano-laser that operates at room temperature with a low threshold of 1.69 pJ, and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range. Related Research Topics
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