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IIIV microlasers epitaxially grown on silicon

Research Area: Heterogeneous integration technology for silicon photonics , Integrated lasers and LEDs , Photonics-electronics convergence, Silicon photonics for telecom, datacom and interconnect

Main Researcher: Zhechao Wang

Due to the indirect bandgap of silicon, the realization of efficient on-chip light sources still remains the most fundamental challenge for silicon photonics. Among various approaches, epitaxial growth of IIIV materials on silicon can bridge two important material platfroms on the atomic level, which may provide the final answer to this fundamental challenge.

To eliminate the defects and dislocations that arise from the large lattice and thermal coefficient mismatch between IIIV and Si, a unique technique called defect trapping effect is utilized. When performing selective growth of IIIV in a nano-scale trench, defects and dislocations will be well confined at the bottom, while the IIIV materials grown in the upper section will be with high quality. A transmission electron microscope (TEM) image of the InP material grown inside the nano-trench is presented in Figure 1a, which shows that all dislocations are trapped underneath while the material quality at the top of the trench is superior. Figure 1b shows the scanning electron microscope (SEM) image of InGaAs waveguides grown on silicon. The perfect surface morphology indicate the defect-free material quality.

Figure 1. (a) A transmission electron microscope (TEM) image of the InP material grown inside the nano-trench. (b) A scanning electron microscope (SEM) image of InGaAs waveguides grown on patterned silicon substrate
Figure 1. (a) A transmission electron microscope (TEM) image of the InP material grown inside the nano-trench. (b) A scanning electron microscope (SEM) image of InGaAs waveguides grown on patterned silicon substrate

While different cavity configurations can be applied to the above-presented high quality IIIV/Si materials for on-chip laser demonstration (see one example in Figure 2a, in which a Si photonic crystal cavity is coupled to a InGaAs/InP/Si heterostructure), Figure 2b shows a SEM image of an InP nanowire cavity that is automatically formed during the epitaxial growth. Figure 2c shows the light in-light out curve of a typical InP/Si nanolaser measured at room temperature by optical pumping. The measured lasing threshold is among the lowest thresholds available nowadays for nano-lasers.

Figure 2. (a) Schematic of a on-chip laser formed by the coupling between a silicon photonic crystal cavity and the InGaAs/InP/Si heterostructure. (b) SEM image of an InP nanowire cavity. (c) Measured L-L curve of the InP nanolaser
Figure 2. (a) Schematic of a on-chip laser formed by the coupling between a silicon photonic crystal cavity and the InGaAs/InP/Si heterostructure. (b) SEM image of an InP nanowire cavity. (c) Measured L-L curve of the InP nanolaser

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Related Research Projects

Publications

    International Journals

  1. B. Kunert, W. Guo, Y. Mols, B. Tian, Z. Wang, Y. Shi, D. Van Thourhout, M. Pantouvaki, J. Van Campenhout, R. Langer, K. Barla, III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate, Applied Physics Letters, 109(9), (2016)  Download this Publication (1.3MB).
  2. B. Tian, Z. Wang, Marianna Pantouvaki, Philippe Absil, J. Van Campenhout, Clement Merckling, D. Van Thourhout, Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon, NanoLetters, 17(1), p.559-564 (2016)  Download this Publication (3.2MB).
  3. Z. Wang, B. Tian, Mohanchand Paladugu, Marianna Pantouvaki, N. Le Thomas, Clement Merckling, Weiming Guo, Johan Dekoster, J. Van Campenhout, Philippe Absil, D. Van Thourhout, Polytypic InP Nano-laser Monolithically Integrated on (001) Silicon, Nano Letters, 13(11), p.5063-5069 (2013)  Download this Publication (2.4MB).
  4. Z. Wang, B. Tian, D. Van Thourhout, Design of a novel micro-laser formed by monolithic integration of a III-V pillar with a silicon photonic crystal cavity, Journal of Lightwave Technology, 31(9), p.1475-1481 (2013)  Download this Publication (960KB).
      International Conferences

    1. Y. Shi, Z. Wang, J. Van Campenhout, M. Pantouvaki, B. Kunert, D. Van Thourhout, Monolithic InGaAs/GaAs multi-QWs DFB nanoridge laser directly grown on 300 mm Si Wafer, Advanced Photonics Congress, OSA, United States, p.paper ITu2A.2 (3 pages) (2017)  Download this Publication (573KB).
    2. D. Van Thourhout, Y. Shi, B. Tian, Z. Wang, M. Pantouvaki, C. Merckling, B. Kunert, W. Guo, J. Van Campenhout, III-V on Silicon DFB Laser Arrays, Group IV conference (invited), China, p.FA6 (2016)  Download this Publication (99KB).
    3. D. Van Thourhout, Y. Shi, B. Tian, Z. Wang, M. Pantouvaki, C. Merckling, B. Kunert, W. Guo, J. Van Campenhout, III-V on Silicon DFB Laser Arrays, Summer Topicals 2016 (invited), United States, p.MB4.1 (2016)  Download this Publication (103KB).
    4. Z. Wang, Marianna Pantouvaki, G. Morthier, Clement Merckling, Joris Van Campenhout, D. Van Thourhout, G. Roelkens, Heterogeneous Integration of InP Devices on Silicon, the 28th International Conference on Indium Phosphide and Related Materials (IPRM) (invited), Japan, p.paper ThD1-1 (2016)  Download this Publication (379KB).
    5. D. Van Thourhout, Z. Wang, B. Tian, Y. Shi, M. Pantouvaki, C. Merckling, Y. Hu, I. Asselberghs, S. Brems, L. Abdollahi Shiramin, C. Alessandri, J. George, J. Beeckman, M. Hsu, P .Absil, J. Van Campenhout, New Materials for Multifunctional Photonic ICs, Conferencia Españolade Nanofotonica (invited), Spain, p.81 (2016)  Download this Publication (57KB).
    6. Z. Wang, B. Tian, Marianna Pantouvaki, Joris Van Campenhout, Clement Merckling, Dries Van Thourhout, Room Temperature InGaAs/InP Distributed Feedback Laser Directly Grown on Silicon, Conference on Lasers and Electro-Optics (CLEO), United States, (2016)  Download this Publication (307KB).
    7. Z. Wang, B. Tian, Marianna Pantouvaki, Joris Van Campenhout, Clement Merckling, Dries Van Thourhout, Room Temperature InGaAs/InP Distributed Feedback Laser Directly Grown on Silicon, Conference on Lasers and Electro-Optics (CLEO), United States, (2016)  Download this Publication (307KB).
    8. B. Tian, Z. Wang, D. Van Thourhout, J. Van Campenhout, Weiming Guo, Marianna Pantouvaki, Philippe Absil, Clement Merckling, Monolithic integrated InP distributed Bragg reflector (DBR) lasers on (001) silicon, CLEO/Europe-EQEC Conference, Germany, (2015)  Download this Publication (706KB).
    9. Z. Wang, A. Malik, B. Tian, M. Muneeb, Clement Merckling, Marianna Pantouvaki, Yosuke Shimura, Roger Loo, Joris Van Campenhout, D. Van Thourhout, G. Roelkens, Near/Mid-Infrared Heterogeneous Si Photonics, The 9th International Conference On Silicon Epitaxy And Heterostructures (invited), (2015)  Download this Publication (3.5MB).
    10. Z. Wang, Clement Merckling, B. Tian, Weiming Guo, Marianna Pantouvaki, Joris Van Campenhout, D. Van Thourhout, Selective epitaxial growth of III-Vs on patterned 300 mm Si substrate, Progress In Electromagnetics Research Symposium (invited), China, (2014)  Download this Publication (92KB).
    11. Z. Wang, Clement Merckling, B. Tian, Weiming Guo, Marianna Pantouvaki, Joris Van Campenhout, D. Van Thourhout, Philippe Absil, Integration of InP nanowire lasers on (001) silicon substrate by selective epitaxial growth, Progress In Electromagnetics Research Symposium (invited), China, (2014)  Download this Publication (220KB).
    12. B. Tian, Z. Wang, D. Van Thourhout, Marianna Pantouvaki, Weiming Guo, Merckling Clement, Joris Van Campenhout, InP Nanowire lasers Epitaxially Grwon on (001) Silicon ‘V- groove’ templates, International Conference on Indium Phosphide and Related Materials(IPRM) 2014, (2014)  Download this Publication (293KB).
    13. Z. Wang, Marianna Pantouvaki, Mohan Paladugu, B. Tian, Richard Olivier, Bender Hugo, Clement Merckling, Weiming Guo, Johan Dekoster, Matty Caymax, Joris Van Campenhout, D. Van Thourhout, High Quality InP Localized Growth on Silicon for Photonics Applications, Progress In Electromagnetics Research Symposium (PIERS 2013), Sweden, p.68 (2013)  Download this Publication (220KB).
    14. Z. Wang, B. Tian, Mohan Paladugu, Marianna Pantouvaki, Clement Merckling, Weiming Guo, Johan Dekoster, Matty Caymax, J. Van Campenhout, Philippe Absil, D. Van Thourhout, An Ultra-Short InP Nanowire Laser Monolithic Integrated on (001) Silicon Substrate_final, IEEE summer topicals 2013, United States, p.23-24 (2013)  Download this Publication (369KB).
    15. B. Tian, M. Paladugu, Z. Wang, P. Marianna, D. Van Thourhout, Photoluminescence characterization of III-V materials epitaxially grown on silicon, Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Belenux Chapter, Belgium, p.247-250 (2012)  Download this Publication (2.7MB).

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