Authors:	A. Malik, S. Dwivedi, L. Van Landschoot, M. Muneeb, Y. Shimura, G. Lepage, J. Van Campenhout, W. Vanherle, T. Van Opstal, R. Loo, G. Roelkens
Title:	Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared
Format:	International Journal
Publication date:	11/2014
Journal/Conference/Book:	Optics Express
Editor/Publisher:	Optical Society of America,
Volume(Issue):	22(23) p.28479-28488
DOI:	10.1364/OE.22.028479
Citations:	102 (Dimensions.ai - last update: 17/11/2024) 96 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract

Germanium-on-silicon thermo-optic phase shifters are demonstrated
in the 5 um wavelength range. Basic phase shifters require 700
mW of power for a 2pi phase shift. The required power is brought down
to 80 mW by complete undercut using focused ion beam. Finally an
efficient thermo-optic phase shifter is demonstrated using germanium on
SOI platform. A tuning power of 105 mW is achieved for Ge-on-SOI which
is lowered to 16 mW for a free standing phase shifter.

Related Research Topics

• Quantum cascade laser integration on silicon-based waveguide circuits
• mid-infrared silicon-based waveguide circuit technology

Related Projects

• ERC-StG: MIRACLE (Mid-InfraRed active photonic integrated cicuits for life sciences and environment)