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Authors: S. Gupta, A. Srinivasan, M. Pantouvaki, H. Chen, P. Verheyen, G. Lepage, D. Van Thourhout, G. Roelkens, K. Saraswat, P. Absil, J. Van Campenhout
Title: 50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform
Format: International Conference Presentation
Publication date: 3/2015
Journal/Conference/Book: Optical Fiber Communication Conference
Editor/Publisher: OSA, 
DOI: 10.1364/ofc.2015.tu2a.4
Citations: 14 (Dimensions.ai - last update: 18/10/2020)
9 (OpenCitations - last update: 19/10/2020)
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Citations (OpenCitations)

Abstract

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.


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