Authors: | S. Gupta, A. Srinivasan, M. Pantouvaki, H. Chen, P. Verheyen, G. Lepage, D. Van Thourhout, G. Roelkens, K. Saraswat, P. Absil, J. Van Campenhout | Title: | 50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform | Format: | International Conference Presentation | Publication date: | 3/2015 | Journal/Conference/Book: | Optical Fiber Communication Conference
| Editor/Publisher: | OSA, | DOI: | 10.1364/ofc.2015.tu2a.4 | Citations: | 26 (Dimensions.ai - last update: 17/11/2024) 17 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss. |
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Citations (OpenCitations)
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