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Ir. Ashwyn Srinivasan 

This person is working in this group since 2013.
Affiliation: imec
Silicon Photonics
Address: Kapeldreef 75
3001 Heverlee
Belgium
Phone: +32-1-628 7982
E-mail: ashwyn.srinivasan@imec.be
LinkedIn: https://www.linkedin.com/in/srinivasan-ashwyn-srinivasan-a597a285
Personal Homepage: https://scholar.google.com/citations?user=IE9yCncAAAAJ&hl=en
AshwynSrinivasan
Ashwyn Srinivasan received his Master's degree in Micro and Nanotechnologies for Integrated systems from Swiss Federal Institute of Technology Lausanne, Grenoble INP and Politecnico di Torino in September 2013 with La Mention Tres Bien (French equivalent of summa cum laude) and 110 (cum laude)/110. As a part of Master's degree he completed his master thesis on "Microscale Photodiode using Advanced SiGe Stressor Layer" at Physical Optics and Electronics Group, Massachusetts Institute of Technology. He also holds a Bachelors degree on Electronics and Communication Engineering from National Institute of Technology, Tiruchirappalli.

His research interest centers around Ge based ultrafast and integrated optics, specifically on Ge(Sn) laser source on Si for short-reach optical interconnection.

Specific Research Topics

Publications (19)

    International Journals

  1. M. Pantouvaki, A. Srinivasan, Y. Ban, P. De Heyn, P. Verheyen, B. Snyder, M. Rakowski, J. De Coster, G. Lepage, H. Chen, N. Golshani, P. Absil, J. Van Campenhout, Active Components for 50Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform, IEEE Journal on Lightwave Technology (invited), (2016).
  2. Y. Shimura, A. Srinivasan, R. Loo, Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers, ECS Journal of Solid State Science and Technology, 5(5), p.Q140-Q143 (2016)  Download this Publication (605KB).
  3. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Extraction of Carrier Lifetime using Pump Probe Spectroscopy on Integrated Ge Waveguides, Applied Physics Letters, 108, p.211101 (2016).
  4. A. Srinivasan, M. Pantouvaki, S. Gupta, H. Chen, P. Verheyen, G. lepage, G. Roelkens, K. Saraswat, D. Van Thourhout, P. Absil, J. Van Campenhout, 56Gb/s Germanium Waveguide Electro-Absorption Modulator, Journal of Lightwave Technology (invited), 34(2), p.419-424 (2016).
  5. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, Marianna Pantouvaki, J. Van Campenhout, Roger Loo, Enhanced active P doping using high order Ge precursors leading to intense photoluminescence, Thin Solid Films, (2015).
      International Conferences

    1. P. De Heyn, V. Kopp, A. Srinivasan, P. Verheyen, J. Park, M. S. Wlodawski, J. Singer, D. Neugroschl, B. Snyder, S. Balakrishnan, G. Lepage, M. Pantouvaki, P. Absil, J. Van Campenhout, Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links , accepted for publication in Optical Fiber Communication Conference, United States,  (to be published).
    2. A. Srinivasan, A. Prabhulinga, C. Porret, Y. Shimura, D. Van Thourhout, M. Pantouvaki, R. Loo, J. Van Campenhout, Phosphorus doped Ge layers for optical applications, Atomically Controlled Processing for Ultra-large Scale Integration (invited), Germany, (2016).
    3. P. De Heyn, A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, S. Balakrishnan, G. Lepage, D. Van Thourhout, M. Pantouvaki, P. Absil, J. Van Campenhout, High-Speed Germanium-Based Waveguide Electro-Absorption Modulator, 21st Optoelectronics and Communications Conference/International Conference on Photonics in Switching (invited), Japan, (2016)  Download this Publication (401KB).
    4. A. Srinivasan, M. Pantouvaki, Y. Shimura, C. Porret, R. Van Deun, R. Loo, D. Van Thourhout, J. Van Campenhout, Laser Annealed in-situ P-doped Ge for on-chip laser source applications, SPIE Photonics Europe, Belgium, (2016)  Download this Publication (118KB).
    5. A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout, 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator, Optical Fiber Communication Conference 2016, United States, p.Tu3D.7 (2016).
    6. M. Pantouvaki, P. De Heyn, M. Rakowski, P. Verheyen, B. Snyder, A. Srinivasan, H. Chen, J. De Coster, G. Lepage, P. Absil, J. Van Campenhout, 50 Gb/s Silicon Photonics Platform for Short-Reach Optical Interconnects, Optical Fiber Communication Conference 2016 (invited), United States, p.Th4H.4 (2016).
    7. P. Absil, P. De Heyn, H. Chen, A. Srinivasan, P. Verheyen, S. Balakrishnan, G. Lepage, M. Pantouvaki, J. De Coster, G. Roelkens, D. Van Thourhout, J. Van Campenhout, Isipp-200: a silicon photonics platform supporting optical data rates beyond 50Gb/s, SPIE Photonics West 2016 (invited), United States, (2016).
    8. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. V. Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    9. R. Loo, A. Srinivasan, Y. Shimura, C. Porret, D. Van Thourhout, R. V. Deun, T. Stoica, D. Buca, J. Van Campenhout, Ge Epitaxial Growth in View of Optical Device Applications, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    10. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhancement of Active Phosphorus Concentration in Ge CVD layers in View of Group-IV Optical Interconnections using Low Temperature in-situ Doping and High Order Ge Precursors, International Symposium on EcoTopia Science 2015, (2015).
    11. Y Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhanced Ge Photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatuers, 2015 E-MRS Fall Meeting and Exhibit , (2015).
    12. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Carrier Lifetime Assessment in Integrated Ge Waveguide Devices, 12th International Conference on Group IV Photonics (GFP), Canada, p.ThC2 (2015).
    13. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, Marianna Pantouvaki, J. Van Campenhout, Roger Loo, Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications, The 9th International Conference On Silicon Epitaxy And Heterostructures, Canada, p.91-92 (2015)  Download this Publication (1.5MB).
    14. S. Gupta, A. Srinivasan, M. Pantouvaki, H. Chen, P. Verheyen, G. Lepage, D. Van Thourhout, G. Roelkens, K. Saraswat, P. Absil, J. Van Campenhout, 50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform, Optical Fiber Communication Conference, (2015).
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