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Ir. Ashwyn Srinivasan  (Doctoral Researcher)

This person worked in the group from 2013 till 2018.

Affiliation: imec
Silicon Photonics
Address: Kapeldreef 75
3001 Heverlee
Belgium
Phone: +32-1-628 7982
E-mail: ashwyn.srinivasan@imec.be
LinkedIn: https://www.linkedin.com/in/srinivasan-ashwyn-srinivasan-a597a285
Personal Homepage: https://scholar.google.com/citations?user=IE9yCncAAAAJ&hl=en
Promotor: Dries Van Thourhout
PhD Thesis: Ashwyn Srinivasan, Geavanceerde componenten in germanium voor optische interconnecties, Advanced Germanium Devices for Optical Interconnects, 4/2018
AshwynSrinivasan
Ashwyn Srinivasan received his Master's degree in Micro and Nanotechnologies for Integrated systems from Swiss Federal Institute of Technology Lausanne, Grenoble INP and Politecnico di Torino in September 2013 with La Mention Tres Bien (French equivalent of summa cum laude) and 110 (cum laude)/110. As a part of Master's degree he completed his master thesis on "Microscale Photodiode using Advanced SiGe Stressor Layer" at Physical Optics and Electronics Group, Massachusetts Institute of Technology. He also holds a Bachelors degree on Electronics and Communication Engineering from National Institute of Technology, Tiruchirappalli.

His research interest centers around Ge based ultrafast and integrated optics, specifically on Ge(Sn) laser source on Si for short-reach optical interconnection.

Specific Research Topics

Publications (37)

    International Journals

  1. L. Bogaert, J. Van Kerrebrouck, L. Breyne, J. Lambrecht, H. Li, K. Van Gasse, J. Verbist, M. Vanhoecke, H. Ramon, A. Srinivasan, P. De Heyn, J. Van Campenhout, P. Ossieur, P. Demeester, X. Yin, J. Bauwelinck, G. Torfs, G. Roelkens, SiGe EAM-Based Transceivers for Datacenter Interconnects and Radio over Fiber, IEEE Journal on Selected Topics in Quantum Electronics (invited), 27(3), p.6000113 doi:10.1109/JSTQE.2020.3027046 (2021)  Download this Publication (5.7MB).
  2. A. Srinivasan, C. Porret, E. Vissers, P. Favia, J. De Coster, H. Bender, R.Loo, D. Van Thourhout, J. Van Campenhout, M. Pantouvaki, High absorption contrast quantum confinedstark effect in ultra-thin Ge/SiGe quantum well stacks grown on si, IEEE Journal on Selected Topics in Quantum Electronics, 56(1), p.5200207 (7 pages) doi:10.1109/JQE.2019.2949640 (2020)  Download this Publication (1.5MB).
  3. J. Verbist, J. Lambrecht, M. Verplaetse, A. Srinivasan, P. De Heyn, T. De Keulenaer, R. Pierco, A. Vyncke, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Torfs, G. Roelkens, Real-time and DSP-free 128 Gb/s PAM-4 link using a binary driven silicon photonic transmitter, Journal of Lightwave Technology (invited), 37(2), p.274-280 doi:10.1109/jlt.2018.2877461 (2019)  Download this Publication (10.5MB).
  4. J. Verbist, M. Vanhoecke, M. Lillieholm, A. Srinivasan, P. De Heyn, J. Van Campenhout, M. Galili, L. Oxenlowe, X. Yin, J. Bauwelinck, G. Roelkens, 4:1 silicon photonic serialiser for datacenter interconnects demonstrating 104Gbaud OOK and PAM4 transmission, Journal of Lightwave Technology (invited), 37(5), p.1498-1503 doi:10.1109/jlt.2019.2897401 (2019)  Download this Publication (2.9MB).
  5. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout, Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers, Applied Physics Letters, 113(16), p.paper 161101 doi:10.1063/1.5040153 (2018)  Download this Publication (826KB).
  6. J. Verbist, J. Lambrecht, M. Verplaetse, J. Van Kerrebrouck, A. Srinivasan, P. De Heyn, T. De Keulenaer, X. Yin, G. Torfs, J. Van Campenhout, G. Roelkens, J. Bauwelinck, DAC-less and DSP-free 112 Gb/s PAM-4 Transmitter using Two Parallel Electro- Absorption Modulators, Journal of Lightwave Technology (invited), 36(5), p.1281-1286 doi:10.1109/JLT.2017.2789164 (2018)  Download this Publication (3.9MB).
  7. J. Verbist, M. Verplaetse, A. Srinivasan, J. Van Kerrebroeck, P. De Heyn, P. Absil, T. De Keulenaer, R. Pierco, A. Vyncke, G. Torfs, X. Yin, G. Roelkens, J. Van Campenhout, J. Bauwelinck, Real-time 100 Gb/s NRZ and EDB transmission with a GeSi electro-absorption modulator for short-reach optical interconnects, Journal of Lightwave Technology (invited), 36(1), p.90-96 doi:10.1109/JLT.2017.2775630 (2018)  Download this Publication (722KB).
  8. Y. Yamamoto, L-W. Nien, G. Capellini, M. Virfilio, I. Costina, M. A. Schubert, W. Seifert, A. Srinivasan, R. Loo, G. Scappucci, D. Sabbagh, A. Hesse, J. Murota, T. Schroeder, B. Tillack, Photoluminescence of phosphorus atomic layer doped Ge grown on Si, Semiconductor Science and Technology, p.104005 (6 pages) doi:10.1088/1361-6641/aa8499 (2016).
  9. M. Pantouvaki, A. Srinivasan, Y. Ban, P. De Heyn, P. Verheyen, B. Snyder, M. Rakowski, J. De Coster, G. Lepage, H. Chen, N. Golshani, P. Absil, J. Van Campenhout, Active Components for 50Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform, IEEE Journal on Lightwave Technology (invited), doi:10.1109/jlt.2016.2604839 (2016).
  10. Y. Shimura, A. Srinivasan, R. Loo, Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers, ECS Journal of Solid State Science and Technology, 5(5), p.Q140-Q143 doi:10.1149/2.0301605jss (2016)  Download this Publication (605KB).
  11. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Extraction of Carrier Lifetime using Pump Probe Spectroscopy on Integrated Ge Waveguides, Applied Physics Letters, 108, p.211101 doi:10.1063/1.4952432 (2016).
  12. A. Srinivasan, M. Pantouvaki, S. Gupta, H. Chen, P. Verheyen, G. lepage, G. Roelkens, K. Saraswat, D. Van Thourhout, P. Absil, J. Van Campenhout, 56Gb/s Germanium Waveguide Electro-Absorption Modulator, Journal of Lightwave Technology (invited), 34(2), p.419-424 doi:10.1109/JLT.2015.2478601 (2016).
  13. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhanced active P doping using high order Ge precursors leading to intense photoluminescence, Thin Solid Films, doi:10.1016/j.tsf.2015.07.071 (2015).
      International Conferences

    1. J. Verbist, M. Lillieholm, J. Van Kerrebrouck, A. Srinivasan, P. De Heyn, J. Van Campenhout, M. Galili, L. Oxenlowe, X. Yin, J. Bauwelinck, G. Roelkens, 104 Gbaud OOK and PAM-4 transmission over 1km of SMF using a silicon photonics transmitter with quarter-rate electronics, Optical Fiber Communications Conference and Exhibition (OFC 2019), United States, p.paper Tu2I.2 (3 pages) doi:10.1364/OFC.2019.Tu2I.2 (2019)  Download this Publication (1.2MB).
    2. A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, J. Van Campenhout, High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers, Conference on Lasers and Electro-Optics Pacific Rim, China, p.Th3C.1 doi:10.1364/CLEOPR.2018.Th3C.1 (2018).
    3. C. Ozdemir, S. Kim, N. Kuznetsova, A. Srinivasan, M. Baryshnikova, B. Kunert, M. Pantouvaki, G. Roelkens, D. Van Thourhout, J. Van Campenhout, Monolithic III-V Waveguide Photodetectors on Silicon, ePIXfab Silicon Photonics Summer School, Belgium, (2018).
    4. J. Verbist, M. Verplaetse, J. Lambrecht, A. Srinivasan, P. De Heyn, T. De Keulenaer, R. Pierco, A. Vyncke, P. Absil, X. Yin, G. Torfs, J. Van Campenhout, G. Roelkens, J. Bauwelinck, 100 Gb/s DAC-less and DSP-free Transmitters using GeSi EAMs for Short-Reach Optical Interconnects, Optical Fiber Communication Conference (OFC) (invited), United States, p.W4D.4  doi:10.1364/OFC.2018.W4D.4 (2018)  Download this Publication (638KB).
    5. P. Absil, K. Croes, A. Lesniewska, P. De Heyn, Y. Ban, B. Snyder, J. De Coster, F. Fodor, V. Simons, S. Balakrishnan, G. Lepage, N. Golshani, S. Lardenois, A. Srinivasan, H. Chen, W. Vanherle, R. Loo, R. Boufadil, M. Detalle, A. Miller, P. Verheyen, M. Pantouvaki, J. Van Campenhout, Reliable 50Gb/s Silicon Photonics Platform for Next-Generation Data Center Optical Interconnects, 63rd International Electron Devices Meeting (invited), United States, doi:10.1109/iedm.2017.8268494 (2017).
    6. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout, Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser applications, 30th Annual Conference of the IEEE Photonics Society (IPC), United States, p.311-312 doi:10.1109/ipcon.2017.8116120 (2017).
    7. J. Verbist, J. Lambrecht, M. Verplaetse, J. Van Kerrebrouck, A. Srinivasan, P. De Heyn, T. De Keulenaer, X. Yin, J. Van Campenhout, G. Roelkens, J. Bauwelinck, DAC-less and DSP-free PAM 4 Transmitter at 112 Gb/s with Two Parallel GeSi Electro-Absorption Modulators, European Conference on Optical Communication (ECOC), Sweden, p.PDP.C.5 doi:10.1109/ecoc.2017.8346098 (2017)  Download this Publication (450KB).
    8. J. Verbist, M. Verplaetse, A. Srinivasan, P. De Heyn, T. De Keulenaer, R. Vaernewyck, R. Pierco, A. Vyncke, P. Verheyen, S. Balakrishnan, G. Lepage, M. Pantouvaki, P. Absil, X.Yin, G. Roelkens, G. Torfs, J. Van Campenhout, J. Bauwelinck, Real-Time 100 Gb/s NRZ-OOK Transmission with a Silicon Photonics GeSi Electro-Absorption Modulator, IEEE Optical Interconnects Conference (OI) 2017, United States, p.29-30 doi:10.1109/oic.2017.7965515 (2017)  Download this Publication (377KB).
    9. P. De Heyn, V. Kopp, A. Srinivasan, P. Verheyen, J. Park, M. S. Wlodawski, J. Singer, D. Neugroschl, B. Snyder, S. Balakrishnan, G. Lepage, M. Pantouvaki, P. Absil, J. Van Campenhout, Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links , Optical Fiber Communication Conference, United States, p.paper ThB1B.7 doi:10.1364/ofc.2017.th1b.7 (2017).
    10. J. Verbist, M. Verplaetse, A. Srinivasan, P. De Heyn, T. De Keulenaer, R. Pierco, R. Vaernewyck, A. Vyncke, P. Absil, G. Torfs, X. Yin, G. Roelkens, J. Van Campenhout, J. Bauwelinck, First Real-Time 100-Gb/s NRZ-OOK Transmission over 2 km with a Silicon Photonic Electro-Absorption Modulator, Optical Fiber Communication Conference (2017) - Postdeadline Papers, United States, p.1-3, Th5C.4 doi:10.1364/OFC.2017.Th5C.4 (2017)  Download this Publication (1.1MB).
    11. A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout, Reduction of Optical Bleaching in Phosphorus doped Ge layers on Si, 14th International Conference on Group IV Photonics, Germany, p.53-54 doi:10.1109/group4.2017.8082192 (2016).
    12. A. Srinivasan, A. Prabhulinga, C. Porret, Y. Shimura, D. Van Thourhout, M. Pantouvaki, R. Loo, J. Van Campenhout, Phosphorus doped Ge layers for optical applications, Atomically Controlled Processing for Ultra-large Scale Integration (invited), Germany, (2016).
    13. P. De Heyn, A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, S. Balakrishnan, G. Lepage, D. Van Thourhout, M. Pantouvaki, P. Absil, J. Van Campenhout, High-Speed Germanium-Based Waveguide Electro-Absorption Modulator, 21st Optoelectronics and Communications Conference/International Conference on Photonics in Switching (invited), Japan, (2016)  Download this Publication (401KB).
    14. A. Srinivasan, M. Pantouvaki, Y. Shimura, C. Porret, R. Van Deun, R. Loo, D. Van Thourhout, J. Van Campenhout, Laser Annealed in-situ P-doped Ge for on-chip laser source applications, SPIE Photonics Europe, Belgium, (2016)  Download this Publication (118KB).
    15. A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout, 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator, Optical Fiber Communication Conference 2016, United States, p.Tu3D.7 doi:10.1364/ofc.2016.tu3d.7 (2016).
    16. M. Pantouvaki, P. De Heyn, M. Rakowski, P. Verheyen, B. Snyder, A. Srinivasan, H. Chen, J. De Coster, G. Lepage, P. Absil, J. Van Campenhout, 50 Gb/s Silicon Photonics Platform for Short-Reach Optical Interconnects, Optical Fiber Communication Conference 2016 (invited), United States, p.Th4H.4 (2016).
    17. P. Absil, P. De Heyn, H. Chen, A. Srinivasan, P. Verheyen, S. Balakrishnan, G. Lepage, M. Pantouvaki, J. De Coster, G. Roelkens, D. Van Thourhout, J. Van Campenhout, Isipp-200: a silicon photonics platform supporting optical data rates beyond 50Gb/s, SPIE Photonics West 2016 (invited), United States, (2016).
    18. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. V. Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    19. R. Loo, A. Srinivasan, Y. Shimura, C. Porret, D. Van Thourhout, R. V. Deun, T. Stoica, D. Buca, J. Van Campenhout, Ge Epitaxial Growth in View of Optical Device Applications, 9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" (invited), Japan, (2016).
    20. Y. Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhancement of Active Phosphorus Concentration in Ge CVD layers in View of Group-IV Optical Interconnections using Low Temperature in-situ Doping and High Order Ge Precursors, International Symposium on EcoTopia Science 2015, (2015).
    21. Y Shimura, A. Srinivasan, D. Van Thourhout, R. Van Deun, M. Pantouvaki, J. Van Campenhout, R. Loo, Enhanced Ge Photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatuers, 2015 E-MRS Fall Meeting and Exhibit , (2015).
    22. A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout, Carrier Lifetime Assessment in Integrated Ge Waveguide Devices, 12th International Conference on Group IV Photonics (GFP), Canada, p.ThC2 doi:10.1109/group4.2015.7305916 (2015).
    23. Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, M. Pantouvaki, J. Van Campenhout, Roger Loo, Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications, The 9th International Conference On Silicon Epitaxy And Heterostructures, Canada, p.91-92 (2015)  Download this Publication (1.5MB).
    24. S. Gupta, A. Srinivasan, M. Pantouvaki, H. Chen, P. Verheyen, G. Lepage, D. Van Thourhout, G. Roelkens, K. Saraswat, P. Absil, J. Van Campenhout, 50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform, Optical Fiber Communication Conference, doi:10.1364/ofc.2015.tu2a.4 (2015).
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