Authors:	S. Uvin, S. Keyvaninia, M. Tassaert, Z. Wang, X. Fu, S. Latkowski, J. Marien, L. Thomassen, F. Lelarge, G. Duan, G. Lepage, P. Verheyen, J. Van Campenhout, E. Bente, G. Roelkens
Title:	1.7 kHz RF linewidth III-V-on-silicon mode-locked laser
Format:	International Conference Proceedings
Publication date:	8/2015
Journal/Conference/Book:	12th Intenational Conference on Group IV Photonics (GFP)
Volume(Issue):	p.WF2
Location:	Vancouver, Canada
DOI:	10.1109/group4.2015.7305936
Citations:	Look up on Google Scholar
Download:	(281KB)

Abstract

For the first time we demonstrate an anti-colliding mode-locked laser implemented on a III-V-on-silicon platform. In passive mode-locked operation a 1.7kHz 3dB linewidth of the fundamental RF tone at 4.83GHz is obtained.

Related Research Topics

• InP on Si lasers for telecommunication applications

Related Projects

• ERC-StG: MIRACLE (Mid-InfraRed active photonic integrated cicuits for life sciences and environment)