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Authors: A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout
Title: 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator
Format: International Conference Proceedings
Publication date: 3/2016
Journal/Conference/Book: Optical Fiber Communication Conference 2016
Volume(Issue): p.Tu3D.7
Location: United States
DOI: 10.1364/ofc.2016.tu3d.7
Citations: 10 (Dimensions.ai - last update: 28/2/2021)
4 (OpenCitations - last update: 15/2/2021)
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Abstract

We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB with 4.4±0.6dB insertion loss and the dynamic extinction ratio is 3.0dB at 50Gb/s NRZ-OOK with a 2V swing.

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