| Authors: | A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. Van Campenhout | | Title: | 50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator | | Format: | International Conference Proceedings | | Publication date: | 3/2016 | | Journal/Conference/Book: | Optical Fiber Communication Conference 2016
| | Volume(Issue): | p.Tu3D.7 | | Location: | United States | | DOI: | 10.1364/ofc.2016.tu3d.7 | | Citations: | 19 (Dimensions.ai - last update: 17/11/2024)
12 (OpenCitations - last update: 27/6/2024)
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Abstract
We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB with 4.4±0.6dB insertion loss and the dynamic extinction ratio is 3.0dB at 50Gb/s NRZ-OOK with a 2V swing. Related Research Topics
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