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Authors: P. De Heyn, A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, S. Balakrishnan, G. Lepage, D. Van Thourhout, M. Pantouvaki, P. Absil, J. Van Campenhout
Title: High-Speed Germanium-Based Waveguide Electro-Absorption Modulator
Format: International Conference Presentation
Publication date: 7/2016
Journal/Conference/Book: 21st Optoelectronics and Communications Conference/International Conference on Photonics in Switching (invited)
Location: Nigata, Japan
Internal Reference: [N-1941]
Download: Download this Publication (401KB) (401KB)

Abstract

Germanium-based waveguide electro-absorption modulators are reported in C- and L-band wavelength operation at 56Gb/s (NRZ-OOK) with extinction ratio of >3dB at 2V peak-to-peak and insertion loss below 5dB. The device is implemented in a fully integrated Si photonics platform on 200mm silicon-on-insulator wafer with 220nm top Si thickness. Wafer-scale performance data confirms the manufacturability of the device. This demonstrates the great potential for realizing high-density and low-power silicon photonic transceivers for short range interconnect.

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