| Authors: | P. De Heyn, A. Srinivasan, P. Verheyen, R. Loo, I. De Wolf, S. Balakrishnan, G. Lepage, D. Van Thourhout, M. Pantouvaki, P. Absil, J. Van Campenhout | | Title: | High-Speed Germanium-Based Waveguide Electro-Absorption Modulator | | Format: | International Conference Presentation | | Publication date: | 7/2016 | | Journal/Conference/Book: | 21st Optoelectronics and Communications Conference/International Conference on Photonics in Switching
(invited)
| | Location: | Nigata, Japan | | Citations: | Look up on Google Scholar
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Abstract
Germanium-based waveguide electro-absorption modulators are reported in C- and L-band wavelength operation at 56Gb/s (NRZ-OOK) with extinction ratio of >3dB at 2V peak-to-peak and insertion loss below 5dB. The device is implemented in a fully integrated Si photonics platform on 200mm silicon-on-insulator wafer with 220nm top Si thickness. Wafer-scale performance data confirms the manufacturability of the device. This demonstrates the great potential for realizing high-density and low-power silicon photonic transceivers for short range interconnect. Related Research Topics
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