| Authors: | S. Dhoore, G. Roelkens, G. Morthier | | Title: | Heterogeneously Integrated III-V/SOI DBR Laser with Over 7 nm Continuous Wavelength Tuning Range | | Format: | International Conference Proceedings | | Publication date: | 4/2017 | | Journal/Conference/Book: | European Conference on Integrated Optics (ECIO
| | Volume(Issue): | p.paper M5.2 (2 pages) | | Location: | Eindhoven, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
Many tele- and datacom applications require single-wavelength tunable lasers with easy wavelength control and sufficient tuning range. Such lasers can for instance be used in WDM-based optical networks or to replace fixed wavelength distributed feedback (DFB) lasers. Here we demonstrate over 7 nm continuous wavelength tuning with a novel III-V/SOI DBR laser. The laser structure consists of an SOI waveguide circuit on which a III-V tunable twin-guide (TTG) membrane is heterogeneously integrated by means of adhesive DVS-BCB bonding. The TTG membrane comprises an active layer and a tuning layer in which carriers can be injected to provide gain and phase tuning respectively. The laser cavity is formed by a broadband reflecting facet and a DBR mirror. The latter is implemented as a first-order sidewall-corrugated waveguide grating defined in the 400 nm silicon device layer. The weak sidewall-corrugation provides a narrowband spectral reflection characteristic to ensure single-mode lasing operation. It also provides an additional advantage over ring resonator configurations as for the latter a large free spectral range (FSR) is more difficult to obtain due to minimum bend radii requirements. Related Research Topics
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