| Authors: | A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G.-H. Duan, G. Roelkens, G. Morthier | | Title: | Direct and electro-absorption modulation of a III-V-on-silicon DFB laser at 56 Gbps | | Format: | International Journal | | Publication date: | 11/2017 | | Journal/Conference/Book: | IEEE Journal of Selected Topics in Quantum Electronics
| | Editor/Publisher: | IEEE, | | Volume(Issue): | p.1501307 (7 pages) | | DOI: | 10.1109/JSTQE.2017.2708606 | | Citations: | 25 (Dimensions.ai - last update: 17/11/2024)
21 (OpenCitations - last update: 27/6/2024)
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Abstract
In order to cope with the ever-growing internet traffic, high-speed optical interconnects are becoming indispensable. Silicon photonics is emerging as a key technology for such interconnects. In this paper, we demonstrate 56 Gbps Non-Return to Zero On-Off Keying (NRZ-OOK) direct modulation based on a high bandwidth heterogeneously integrated III-V-on-silicon distributed feedback laser, as well as transmission over 2 km single mode fiber. Using a very similar device, but with electrically isolated and reversely biased tapers, we obtain compact electro-absorption modulation at 56 Gbps NRZ-OOK as well. Related Research Topics
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