| Authors: | J. Zhang, A. Abbasi, A. De Groote, R. Loi, J. O'Callaghan, B.Corbett, A. Jose Trindade, C. A. Bower, G. Roelkens | | Title: | Silicon Photonic Transceiver Array based on the Transfer Printing of III-V O-band Photodetectors | | Format: | International Conference Proceedings | | Publication date: | 4/2017 | | Journal/Conference/Book: | European Conference on Integrated Optics (ECIO)
| | Volume(Issue): | p.M7.1 | | Location: | Eindhoven, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
A 4-channel silicon photonic transceiver array for point-to-point Fiber-To-The-Home (FTTH) optical networks, operating at 10 Gbit/s per channel was demonstrated in this work. A 1550 nm CW laser is coupled to the silicon photonic transceiver, where it is split in 4 channels, each of which has a 10Gbit/s silicon ring modulator to imprint the downstream data on the carrier. O-band III-V photodetectors are integrated on top of the output fiber-to-chip grating couplers of the different channels. While allowing polarization independent detection of the upstream O-band signal, the photodetectors are transparent for the C-band downstream signal, by selecting the cut-off wavelength of the III-V absorbing material to be 1.37um. The integration of the III-V photodetectors was realized using a transfer printing approach, allowing for an efficient use of III-V semiconductor material and enabling the low-cost, wafer-scale integration of the O-band photodetectors on a silicon photonic wafer. The detectors have a 3dB bandwidth of 11GHz at 3V bias with responsivity of 0.4-0.5A/W, while for the C-band signal was 0.025-0.04mA/W. Simultaneous operation for both ring modulator (downstream) and O-band detector (upstream) at 10 Gbit/s of all channels was successfully demonstrated. This enables the realization of transceiver arrays for the central office. Related Research Topics
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