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Authors: S. Kumari, J. S. Gustavsson, E. P. Haglund, J. Bengtsson, A. Larsson, G. Roelkens, R. Baets
Title: Design of an 845 nm GaAs vertical-cavity silicon integrated laser with an intra-cavity grating for coupling to a SiN waveguide circuit
Format: International Journal
Publication date: 6/2017
Journal/Conference/Book: IEEE Photonics Journal
Volume(Issue): 9(4) p.1504109
DOI: 10.1109/jphot.2017.2717380
Citations: 10 ( - last update: 7/7/2024)
7 (OpenCitations - last update: 27/6/2024)
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A short-wavelength hybrid GaAs vertical-cavity silicon integrated laser (VCSIL)
with in-plane waveguide coupling has been designed and optimized using numerical
simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the
hybrid vertical-cavity silicon integrated laser to both set the polarization state of the resonant
optical field and to enable output coupling to a SiN waveguide with high efficiency. The
numerical simulations predict that for apertures of 4 and 6 microns oxide-confined VCSILs
operating at 845 nm wavelength, a slope efficiency for the light coupled to the waveguide of
0.18 and 0.22 mW/mA is achievable respectively while maintaining a low threshold gain of
583 and 589 cm-1 respectively for the lasing.

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