| Authors: | Y. Shi, Z. Wang, J. Van Campenhout, M. Pantouvaki, B. Kunert, D. Van Thourhout | | Title: | Monolithic InGaAs/GaAs multi-QWs DFB nanoridge laser directly grown on 300 mm Si Wafer | | Format: | International Conference Proceedings | | Publication date: | 7/2017 | | Journal/Conference/Book: | Advanced Photonics Congress, OSA
| | Volume(Issue): | p.paper ITu2A.2 (3 pages) | | Location: | New Orleans, Louisiana, United States | | DOI: | 10.1364/iprsn.2017.itu2a.2 | | Citations: | 1 (Dimensions.ai - last update: 14/4/2024)
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Abstract
Ultra-large-volume and low-cost-per-chip CMOS photonics integrated circuit has been searching for high-performance, Si-compatible laser sources that can be directly integrated on Si wafer for mass production. III-V semiconductor, the considered efficient
light generation material, unfortunately has big lattice mismatch and thermal expansion contrast with Si, extremely difficult to be epitaxially grown on Si. Here we demonstrate an optically pumped monolithic InGaAs/GaAs multi-QWs single-mode DFB nano-ridge laser
which is directly grown from 300mm Si wafer by using aspect ratio defect trapping technique. Related Research Topics
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