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Authors: S. Kumari, E. P. Haglund, J. Gustavsson, A. Larsson, G. Roelkens, R. Baets
Title: Vertical-cavity silicon-integrated laser with in-plane waveguide emission at 850 nm
Format: International Journal
Publication date: 2/2018
Journal/Conference/Book: Lasers & Photonics Reviews
Volume(Issue): 12(2) p.1700206
DOI: 10.1002/lpor.201700206
Citations: 24 ( - last update: 21/7/2024)
21 (OpenCitations - last update: 27/6/2024)
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A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 ìm oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 ìW single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.

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