| Authors: | S. Kumari, E. P. Haglund, J. Gustavsson, A. Larsson, G. Roelkens, R. Baets | | Title: | Vertical-cavity silicon-integrated laser with in-plane waveguide emission at 850 nm | | Format: | International Journal | | Publication date: | 2/2018 | | Journal/Conference/Book: | Lasers & Photonics Reviews
| | Volume(Issue): | 12(2) p.1700206 | | DOI: | 10.1002/lpor.201700206 | | Citations: | 23 (Dimensions.ai - last update: 14/4/2024)
6 (OpenCitations - last update: 19/4/2024)
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Abstract
A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 ìm oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 ìW single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB. Related Research Topics
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