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Authors: N. Ye, G. Muliuk, J. Zhang, A. Abbasi, D. Van Thourhout, G. Roelkens, A. J. Trindade, C. Bower
Title: Transfer Print Integration of Waveguide-Coupled Germanium Photodiodes onto Silicon Photonics ICs
Format: International Journal
Publication date: 3/2018
Journal/Conference/Book: IEEE Journal of Lightwave Technology (invited)
Volume(Issue): 36(5) p.1249-1254
DOI: 10.1109/JLT.2017.2777509
Citations: 19 ( - last update: 14/7/2024)
17 (OpenCitations - last update: 27/6/2024)
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We demonstrate the integration of waveguide-coupled germanium photodiodes onto passive silicon waveguide circuits by means of transfer printing. This involves the release of the photodiodes from the silicon-on-insulator source wafer by underetching the buried oxide layer, while at the same time protecting the back-end stack. Tethers were formed to keep the released photodiode coupons in place. Coupons were then transfer printed to a silicon photonic target wafer with an alignment accuracy better than 1 micrometer. 0.66 A/W waveguide-referred photodiode responsivity at 1550 nm was obtained. High speed measurements yielded open eye diagrams at 40 Gbit/s.

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