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Authors: Y. Shi, B. Kunert, M. Baryshnikova, M. Pantouvaki, J. Van Campenhout, D. Van Thourhout
Title: Optical gain characterization of nano-ridge epitaxially grown on a standard Si wafer
Format: International Conference Proceedings
Publication date: 5/2018
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Volume(Issue): p.paper JTu2A.21 (2 pages)
Location: San Jose, United States
Internal Reference: [N-2224]
Download: Download this Publication (630KB) (630KB)

Abstract

With this paper, the authors report optical gain characterization of InGaAs/GaAs nano-ridge amplifierss epitaxially grown on a standard 300-mnm Si wafer, by varying strip length (VSL) method. The measured material gain is  4000cm-1, which is comparable with
conventional GaAs material.

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