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Authors: D. Maes, L. Reis, S. Poelman, E. Vissers, V. Avramovic, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken
Title: High-Speed Photodiodes on Silicon Nitride with a Bandwidth beyond 100 GHz
Format: International Conference Proceedings
Publication date: 5/2022
Journal/Conference/Book: Conference on Lasers and Electro-Optics (CLEO)
Location: San Jose, United States
DOI: 10.1364/CLEO_SI.2022.SM3K.3
Citations: 5 ( - last update: 7/7/2024)
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Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0.45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.

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