Authors:	Z. Ouyang, E.M.B. Fahmy, A. Yimam, B.Kunert, D. Van Thourhout
Title:	Low-optical-pumping-threshold InGaAs/GaAs Nano-ridge Laser Monolithically Grown on 300 mm Silicon Substrate
Format:	International Conference Presentation
Publication date:	5/2023
Journal/Conference/Book:	Conference on Lasers and Electro-Optics
Volume(Issue):	p.paper STh3H.3 (2 pages)
Location:	San Jose, United States
Citations:	Look up on Google Scholar
Download:	(398KB)

Abstract

Amorphous-silicon-grating-on-top DFB-InGaAs/GaAs-laser directly grown on silicon substrate by nano-ridge engineering technique exhibits 2.5 kW/cm2 lasing threshold, 10 times smaller than nano-ridge laser with etched grating, due to avoiding introducing carrier loss path at GaAs-air surface.

Related Research Topics

• IIIV microlasers epitaxially grown on silicon

Related Projects

• ERC-AdG: NARIOS (Nano-Ridge Engineering for Densely Integrated III-V Lasers Directly Grown on Silicon)