| Authors: | A. Yimam, G. Morthier, D. Van Thourhout | | Title: | Semi-analytical model for electrically injected monolithic GaAs on silicon nano-ridge laser diodes | | Format: | International Conference Poster | | Publication date: | 11/2023 | | Journal/Conference/Book: | Annual Symposium of the IEEE Photonics Society Benelux Chapter
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Abstract
In the field of silicon photonics, monolithic integration of III-V materials on silicon is considered the ultimate integration approach in terms of scalability and reduced cost but it is quite challenging due to the large mismatch in crystal lattice constants, polarity and thermal expansion coefficients. Large mismatches in lattice constants and polarity lead to formation of misfit defects, threading dislocations and planar defects severely limiting the carrier lifetime to realize efficient light emission. Nano-ridge engineering was recently implemented by selective area growth over confined regions to restrict defects in narrow oxide trenches and growing the III- V material out of the trench for high modal gain. Here, we present a semi-analytical model that can accurately explain the working principle behind electrically injected In0.2Ga0.8As/GaAs on silicon monolithic nano-ridge laser diodes. We show how the model can be used to study the effect of device parameters on the spectral behavior, the slope efficiency and the threshold gain. Analytical expressions for codirectional mode coupling are used in developing the round-trip laser model. Results from analytical expressions are verified by comparing them with Ansys Lumerical Finite Difference Time Domain (FDTD) simulation results. Related Research Topics
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