Authors:	Y. De Koninck, C. Caer, D. Yudistira, M. Baryshnikova, S. Kanta Patra, H. Sar, P. Hsieh, N. Kuznetsova, D. Colucci, A. Milenin, A. Yimam, G. Morthier, D. Van Thourhout, P. Verheyen, B. Kunert, J. Van Campenhout
Title:	GaAs nano-ridge laser diodes fully fabricated in a 300mm CMOS pilot line
Format:	International Journal
Publication date:	1/2025
Journal/Conference/Book:	Nature
Editor/Publisher:	Nature,
Volume(Issue):	637 p.63-69
DOI:	10.1038/s41586-024-08364-2
Citations:	2 (Dimensions.ai - last update: 19/1/2025) Look up on Google Scholar
Download:	(8.9MB)

Abstract

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p-i-n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020 nm in more than 300 devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.