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Authors: A. Subramanian, S. Selvaraja, P. Verheyen, A. Dhakal, K. Komorowska, R. Baets
Title: Near infrared grating couplers for silicon nitride photonic wires
Format: International Journal
Publication date: 10/2012
Journal/Conference/Book: IEEE Photonics Technology Letters
Volume(Issue): 24(19) p.1700-1703
DOI: 10.1109/LPT.2012.2212881
Citations: 37 (Dimensions.ai - last update: 25/10/2020)
29 (OpenCitations - last update: 19/10/2020)
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Abstract

Silicon nitride (Si3N4) is a promising high index material for dense photonic circuits in the visible-mid infrared photonic applications. Experimental results are presented for the first time for linear and focused grating couplers at near infrared wavelength (around 900nm) for PECVD Si3N4 wires (220 nm × 500 nm). An efficiency of (6.2 dB, 6.5 dB) and 1 dB bandwidth of (26 nm, 40 nm) is reported for the linear and focused grating couplers respectively.

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