We experimentally demonstrate extraction of silicon waveguide geometry with sub-nanometer accuracy using optical measurements. Effective and group indices of silicon on insulator (SOI) waveguides are extracted from the optical measurements. An accurate model linking the geometry of an SOI waveguide to its effective and group indices is used to extract the linewidths and thicknesses within respective errors of 0.37 nm and 0.26 nm on a die fabricated by the IMEC multi-project wafer (MPW) services. A detailed analysis of the setting of the bounds for the effective and group indices is presented to get the right extraction with improved accuracy.
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