| Authors: | P. Dumon, W. Bogaerts, D. Van Thourhout, G. Morthier, R. Baets | | Title: | Compact arrayed waveguide grating devices in silicon-on-insulator | | Format: | International Conference Proceedings | | Publication date: | 12/2005 | | Journal/Conference/Book: | Proceedings Symposium IEEE/LEOS Benelux Chapter
| | Editor/Publisher: | P. Megret, M. Wuilpart, S. Bette, N. Staquet, | | Volume(Issue): | p.105-108 | | Location: | Mons, Belgium | | Citations: | Look up on Google Scholar
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Abstract
Very compact arrayed waveguide gratings were fabricated in Silicon-on-Insulator using CMOS compatible processes. The high index contrast makes a 5 micron bend radius possible. Now, the device size is not limited by the bend radius anymore. The insertion loss of the devices is kept low by applying a double etch technique, and the cross-talk level is reduced by broadening the waveguides were there is no absolute need for single mode waveguides. Measured insertion losses are around 3.5 dB, while the crosstalk level is better than -12dB. A 4×4 AWG was pigtailed and used in a 10 gigabit/s optical backplane interconnect application. Related Research Topics
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